Abstract: A novel resistance simulation model for integrated Hall devices using CMOS technology is proposed. This model can be used to design the overall structure of integrated Hall sensors, converting magnetic signals into electrical signals. Implemented in Verilog-A HDL and executed using the Spectre circuit simulator, it enables applications over a wide temperature range. The behavioral equations and parameters are based on the fundamental theory of Hall devices and semiconductor physics and verified through circuit simulation. To facilitate the simulation of integrated Hall sensors, necessary Verilog-A HDL implementations of the magnetic field model and Hall model are used. Keywords: Hall sensors; resistance model; Verilog-A HDL; behavioral simulation Abstract: A new simulation model for Hall devices in CMOS silicon technology is proposed. Transient effects caused by wide operational range in temperature were taken into account in Verilog-A HDL and implemented in Spectre Circuit Simulator. Behavioral equations and parameters are based on fundamental theory of Hall devices and semiconductor physics and verified experimentally. In order to provide the convenience of simulation about integrated Hall sensors, magnetic field model and Hall model are built in Verilog-A HDL. Key words: Hall sensors; resistance model; Verilog-A HDL; behavioral simulation I. Introduction The increasing need for accuracy of integrated sensors, the updating of new technologies in electronic circuit design, and the increasing importance of Hall devices as sensors[4] have led to the demand for accurate simulation models of these sensors using silicon technology. Due to their small size, high accuracy, and low price, highly integrated Hall sensors are increasingly attractive in a wide range of applications. To maintain this appeal and meet the functional, performance, and stability needs of all future customers, CMOS silicon technology is the preferred choice for mass production of Hall sensors. II. Resistive Model of Hall Elements An integrated Hall sensor unit resembles a diffused resistor in shape, except that it has two additional right-angled contact holes to measure the Hall voltage. The fabrication of integrated Hall sensor units can be implemented in various top views, including circular, square, rectangular, and cross shapes. For details, please click: A Simulation Model of an Integrated Hall Device and Its Applications