The advantages of IGBTs lie in their high input impedance, fast switching speed, low on-state voltage, high off-state blocking voltage, and high current handling capacity of the collector and transmitter. They have become the mainstream power semiconductor device in the power electronics industry. IGBTs have evolved from the third to the fifth generation, and from through-type to non-through-type. IGBT modules have also developed accordingly, from single-transistor modules, half-bridge modules, 6-transistor modules, to the current 7-transistor modules. IGBT drive design is relatively complex, requiring consideration of many factors, such as the appropriate selection of the drive voltage Uge and gate drive resistor Rg, and overcurrent and overvoltage protection. IGBT modules are widely used in UPS, induction heating, inverter welding machine power supplies, frequency converters, and other fields.
Figure 1: Half-bridge module
Figure 2: Full-bridge module (H-bridge)
Figure 3: Three-phase full-bridge 6-transistor package
The Vincotech 7-tube packaged IGBT module distributed by Worldway is mainly used for speed regulation in motor drives and new energy inverters. It consists of 6 tubes plus a single IGBT tube with braking function packaged together to form a 7-tube package.
Figure 4: 7-tube package
Key points for applying a 7-tube module:
1. IGBT module gate drive voltage
Vge must be greater than Vge(th) , meaning the gate drive voltage must be greater than the IGBT's gate threshold voltage for the IGBT to turn on. For this 7-transistor module, the typical value of Vge is 5.8V . To ensure the IGBT is fully saturated and conducting, and to minimize switching losses, a suitable value for Vge needs to be selected. When Vge increases, the on-state resistance decreases, the on-state voltage drop also decreases, and the losses also decrease, but the IGBT's ability to withstand short-circuit current decreases. When Vge is too large, it will cause gate voltage oscillation, which can easily damage the gate. When Vge decreases, the on-state resistance increases, the on-state voltage drop increases, and the losses also increase. To balance these constraints, it is generally selected to be 1.5 to 3 times Vge(th), with a compromise of 12 to 15V. When the IGBT is turned off, a negative bias is generally used to improve anti-interference capability and resistance to di/dt impact. The negative bias is generally -10 to -6V.
Figure 5: IGBT gate switching waveform
2. Determination of the gate resistance Rg of the IGBT
Of course, increasing Rg can suppress the steepness of the gate pulse edge, effectively preventing oscillation, and can also reduce the switching di/dt, limiting the peak voltage of the IGBT collector. However, it will increase the switching time and increase the switching losses. If Rg is too small, it will cause oscillation between the gate and emitter (GE) terminals, damaging the IGBT. Generally, a resistor of about 10K is connected in parallel with Rg to the emitter (E) terminal, and a TVS diode is added between the GE terminals to absorb the peak voltage.
3. Because the IGBT single-tube braking is internally equipped with braking, the drive is turned off when the motor is decelerated. At the same time, as long as this tube is turned on, the energy generated by the rotation of the motor will be absorbed and released. Therefore, the main application is in motor speed control. The following figure is a block diagram of the entire motor control.
Figure 6: Block diagram of the entire motor control system
Figure 7: Optically isolated drivers can be used for the driving section.
The 7-tube package utilizes IGBT4 technology, featuring high integration and minimal PCB traces. It includes a built-in NTC for real-time temperature monitoring within the module, making it ideal for applications in frequency converters and motor speed control. Vincotech IGBTs are now available for order through Worldway. Please call Worldway's service hotline at 40088-73266 for professional and prompt service!
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Six-tube packaged IGBT module
About Shih-Chiang
Founded in 1993, Worldway Advanced Semiconductor is a major distributor in Greater China for globally renowned semiconductor companies and test and measurement instrument companies, including Avago, Renesas Electronics, Silicon Labs, Rogers, Melexis, Infineon, acam, Alliance, Micrel, Littelfuse, NEMICON, EMC & RFLabs, EPSON, Cpyress, Vincotech, SMI, Ricoh Microelectronics, and Keysight. It is also a key supplier to many electronics manufacturing and R&D companies. In addition to covering traditional industrial, communications, consumer, and automotive electronics sectors, its product portfolio also brings cutting-edge technologies and innovative products to emerging markets such as the Internet of Things (IoT), connected vehicles, wearable devices, and smart mobile terminals.
As a technology-driven distribution company, Worldway also boasts a mature technical support team and systematic service processes, providing customers with professional services such as new product introductions, rapid sampling, application consulting, solution and software design, development environment, after-sales service, and logistics, tailored to their specific needs. In 2014, Worldway's annual sales reached US$ 232 million, with 17 branches and offices nationwide and nearly 500 employees.
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