On June 5, 100 silicon carbide (SiC) single crystal growth devices were running at high speed in the production building of the Second Research Institute of China Electronics Technology Group Corporation (hereinafter referred to as CETC No. 2 Institute). The SiC single crystals were growing vigorously in these 100 devices.
Li Bin, director of the First Business Division of the Second Research Institute of China Electronics Technology Group Corporation, said: "These 100 SiC single crystal growth equipment and powders are all independently developed and produced by us. We are very proud that we can produce them ourselves."
SiC single crystal is a third-generation semiconductor material. With its unique characteristics such as large bandgap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, it has become an ideal material for manufacturing high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting, and optoelectronic integrated devices. It is a core material in important fields such as next-generation radar, satellite communication, high-voltage power transmission and transformation, rail transportation, electric vehicles, and communication base stations, and has significant application value and broad application prospects.
Li Bin, director of the First Business Division of the Second Research Institute of China Electronics Technology Group Corporation, said: "High-purity SiC powder is the key raw material for SiC single crystal growth, and the single crystal growth furnace is the core equipment for SiC single crystal growth. In order to grow high-quality SiC single crystals, in addition to having high-purity SiC powder and a single crystal growth furnace, it is also necessary to design, debug and optimize the production process."
According to reports, single crystal growth furnaces require high temperature, high vacuum, and high cleanliness. Currently, only two companies in China can produce single crystal growth furnaces, and the Second Research Institute of China Electronics Technology Group Corporation (CETC) is one of them. They have made breakthroughs in the temperature field design for large-diameter SiC growth, enabling the design, manufacturing, and small-batch production of growth furnaces with high ultimate vacuum and low background leakage rate suitable for 150mm diameter SiC single crystal growth. They have also made breakthroughs in key technologies such as impurity control, particle size control, and crystal form control in high-purity SiC powder, achieving mass production of SiC powder with a purity of over 99.9995%.
