Simulation and Experimental Study of High Voltage IGCT Buffer Circuit
2026-04-06 07:38:26··#1
Abstract: A series snubber circuit for an integrated gate commutation thyristor (IGCT) in a 6kV/10000W high-voltage frequency converter was designed. The range of values for the absorption capacitor and absorption resistor was calculated while analyzing the series snubber circuit. Then, PSIM simulation and experiments were performed on the snubber circuit. The working effect of the snubber circuit was verified by comparing the simulation and experimental waveforms. The results show that the values of the absorption capacitor and absorption resistor are appropriate and can provide good protection for the IGCT. Keywords: Frequency converter; Simulation/Integrated gate commutation thyristor; Snubber circuit 1 Introduction The integrated gate commutation thyristor (IGCT) is a new type of semiconductor device improved from the GTO. It is mainly used in large-scale power electronic complete sets of equipment. It has advantages such as large current, high voltage, high switching frequency, high reliability, compact structure, and low loss, and also has low manufacturing cost and high yield. Therefore, it is gradually replacing GTO and IGBT and has become the preferred device for high-voltage, high-power frequency converters. Currently, high-voltage, high-power motors in my country are mainly 6kV, but the highest withstand voltage level of a single IGCT on the market is only 4.skV. Even with a three-level structure, this still cannot meet the 6kV output voltage requirement. Therefore, in a 6kV high-voltage frequency converter with a three-level structure, two IGCTs need to be connected in series to achieve a higher withstand voltage level. However, when devices are used in series, the differences in their characteristics can lead to uneven transient voltage distribution, causing overvoltage on some devices and threatening their safety. Given that the performance of IGCT devices is crucial to the safe operation of the frequency converter, designing a series snubber circuit for IGCT devices is very important. Here, the IGCT series snubber circuit for a 6kW/1000kW high-voltage frequency converter is designed, simulated using PSIM, and experimentally studied. [b]2 Analysis of IGCT Series Snubber Circuit 2.1 Analysis of di/dt Limiting Circuit and Selection of Parameter Values[/b] [b][align=center]For more details, please click: Simulation and Experimental Study of High-Voltage IGCT Snubber Circuit[/align][/b]