Since the invention of the first thyristor in the late 1950s, power electronics technology has entered the stage of modern electrical drive technology. The silicon controlled rectifier (SCR) device developed based on this technology was a revolution in the field of electrical drives, enabling the conversion and control of electrical energy from rotating converters and static ion converters to the era of converters composed of power electronic devices. This marked the birth of power electronics. In the 1970s, thyristors began to form a series of products ranging from low voltage and low current to high voltage and high current. Ordinary thyristors, which were semi-controlled devices that could not self-turn off, were called the first generation of power electronic devices. With the continuous improvement of theoretical research and manufacturing processes in power electronics technology, power electronic devices have greatly developed in terms of ease of use and variety, representing another leap forward in power electronics technology. Second-generation power electronic devices, such as GTRs, GTOs, and power MOSFETs, were developed, featuring self-turn-off fully controllable technology. The third generation of power electronic devices, represented by the insulated-gate bipolar transistor (IGBT), began to develop towards higher ease of use, higher frequency, faster response, and lower losses. In the 1990s, power electronic devices were developing towards diversification, standardization, modularization, intelligence, and power integration. Based on this, a path was formed encompassing theoretical research, device development, and application penetration in power electronics technology. Internationally, power electronics technology is one of the most competitive high-tech fields. Rectifier diodes are the simplest and most widely used power electronic devices. Currently, three major product series have been developed: general-purpose, fast recovery, and Schottky. Power rectifier diodes play a crucial role in improving the performance of various power electronic circuits, reducing circuit losses, and increasing current utilization efficiency. Since GE developed the first industrial-grade general-purpose thyristor in 1958, structural improvements and process reforms laid the foundation for the development of new devices. In the following decade, bidirectional, inverter, reverse-conducting, and asymmetric thyristors were developed, and thyristor products still have a relatively wide market today. Since the successful trial production of a 0.5kV/0.01kA turn-off GTO in the United States in 1964, the technology has evolved to include 9kV/0.25kA/0.8kHz turn-off GTOs, and even 9kV/2.5kA/0.8kHz and 6kV/6kA/1kHz turn-off GTOs. Among various self-turn-off devices, GTOs have the largest capacity, but the lowest operating frequency. However, they have significant advantages in high-power electric traction drives, thus securing a place in the medium-voltage and high-volume electric traction fields. The GTR series products were developed in the 1970s, with rated values ​​of 1.8kV/0.8kA/2kHz and 0.6kV/0.003kA/100kHz. They are characterized by flexible and mature circuit composition, low switching loss, and short switching time, and are widely used in medium-capacity and medium-frequency circuits. As a high-performance, high-capacity third-generation insulated gate bipolar transistor (IGBT), it has broad development prospects due to its voltage-type control, high input impedance, low drive power, low switching loss, and high operating frequency. The IGCT is a recently developed new device, developed based on the GTO. It is called an integrated gate commutated thyristor, also known as an emitter turn-off thyristor. Its instantaneous switching frequency can reach 20kHz, turn-off time is 1μs, dildt is 4kA/ms, du/dt is 10-20kV/ms, AC blocking voltage is 6kV, DC blocking voltage is 3.9kV, switching time is <2ks, on-state voltage drop is 2.8V at 3600A, and switching frequency is >1000Hz. The research and development of power electronic devices in the 1990s entered an era of high frequency, standardized modularization, integration, and intelligence. Theoretical analysis and experiments have proven that the reduction in the size and weight of electrical products is inversely proportional to the square root of the power supply frequency. In other words, by significantly increasing the standard 50Hz power frequency, the size and weight of electrical equipment using this frequency can be greatly reduced, saving materials in manufacturing, resulting in more significant energy savings during operation, and greatly improving system performance, especially for the aerospace industry. Therefore, the high-frequency development of power electronic devices is the leading direction for future innovation in power electronics technology, and standardized modular hardware structures are an inevitable trend in device development. Currently, advanced modules include multiple units such as switching elements, freewheeling diodes connected in reverse parallel, and drive protection circuits, all standardized and produced as series products, achieving extremely high levels of consistency and reliability. Many large companies worldwide have developed IPM intelligent power modules, such as Mitsubishi and Toshiba in Japan, and International Rectifier in the United States, which have launched mature products. The main features of Shindengen's IPM intelligent power module are: 1. It integrates power chips, detection circuits, and drive circuits, making the main circuit structure extremely simple. 2. Its power chip uses IGBTs with high switching speed and low drive current, and has a built-in current sensor that can efficiently detect overcurrent and short-circuit current, providing safe protection for the power chip. 3. The wiring length of the power supply circuit and drive circuit is controlled to the shortest possible length in the internal wiring, thus effectively solving problems such as surge voltage and noise-induced malfunctions. 4. It has reliable safety protection measures that can promptly shut down the power device in the event of a fault. (This is followed by a separate, unrelated sentence: "Premier Zhu Rongji clearly instructed in 1998 that the construction of the national innovation system must be accelerated in the future. Therefore, it can be said with certainty that in the early 21st century, technological innovation will become the leading content of enterprise work in national development. Developing and establishing a technological innovation mechanism suitable for China's national conditions in the electrical industry, and promoting the continuous upgrading and progress of the new electrical industry through significant progress in power electronics technology, will ultimately lead to its global expansion.") While power electronics technology shares many characteristics with microelectronics, such as rapid development and change, strong penetration and innovation, and exceptional vitality, placing it in a promising industry position and creating new opportunities through integration and development with other disciplines, it also possesses unique features, such as high voltage, large capacity, and a wide range of controllable power. Therefore, the challenge of technological innovation lies in overcoming the hurdle of high voltage and high power, as well as the comprehensive technical difficulties, including materials science and manufacturing processes. The reliability of power electronic devices is a crucial technical indicator. Thus, innovation in power electronics technology involves the mutual penetration of multiple disciplines and has a strong influence on various industrial fields. Therefore, the close relationship between power electronics technology and the nation's basic industries, and the requirement to align with national development policies and industrial strategies, will become increasingly important in the 21st century. Power electronics technology is also known as energy flow technology; therefore, its development and innovation are an important component of the 21st-century sustainable development strategy. Accelerating the transformation towards modern power electronics at the beginning of the 21st century will inevitably create a sunrise high-tech industrial chain, driving technological innovation in my country's industrial sector. Innovation in power electronics technology and the manufacturing processes of power electronic devices have become the most fiercely competitive battleground in the fields of industrial automation control and mechatronics worldwide. Developed countries are investing heavily in this area, both in terms of human, material, and financial resources, aiming to elevate it to a high-tech sector. In terms of theoretical research in power electronics technology, Japan, the United States, and Western European countries such as France, the Netherlands, and Denmark are currently progressing at a similar pace. These countries are continuously developing and improving various advanced power electronic devices, promoting the advancement of power electronics technology towards higher frequencies, achieving high-efficiency energy saving in electrical equipment, and laying an important technological foundation for the miniaturization, lightweighting, and intelligentization of industrial control equipment. This also paints a broad picture for the continuous expansion and innovation of power electronics technology in the 21st century. Compared with developed countries, my country's comprehensive technological capabilities in developing and manufacturing power electronic devices still lag significantly. To develop and innovate my country's power electronics technology and achieve industrial-scale production, it is essential to follow a uniquely Chinese path of industry-academia collaboration, firmly adhering to and mastering the method of combining production, education, and research for common development. Moving from following advanced foreign technologies to independent innovation, innovating through the mutual penetration of interdisciplinary fields, and innovating in device development and circuit structure transformation, is particularly applicable to power technology innovation. Innovation should also be guided by device manufacturing processes and the application of new materials science, thereby promoting technological innovation in power electronic device manufacturing processes and improving device reliability. This will form a foundational, accumulation-based innovation path. Furthermore, technological innovation should be organically combined with product application and market promotion to accelerate the self-reinforcing cycle of technological innovation, promoting and driving technological innovation with a stable foundation. This will enable my country's power electronics technology and device manufacturing processes to achieve significant development, forming a completely new emerging industry, transforming into enormous productivity, and propelling my country's industrial sector from extensive to intensive development, thus promoting high-speed, high-quality, and sustainable development of the national economy.